SC2616 |
RFQ for SC2616 Required Field |
 |
| Product | Manufacturers | Pack | D/C |
| SC2616 | - | QFN18 | 03+ |
The SC2616 is a fully integrated DDR power solution providing power for the VDDQ and the VTT rails. The SC2616 also completely adheres to the ACPI sleep state power requirements. A synchronous buck controller provides the high current of the VDDQ at high efficiency, while a linear sink/source regulator provides the termination voltage with 2 Amp Source/Sink capability. This approach makes the best trade-off between cost and performance. Additional logic and UVLOs complete the functionality of this single chip DDR power solution in compliance with S3 and S5 motherboard signals.
The SC2616 is capable of sourcing up to 20A at the switcher output, and 2A source/sink at the VTT output. The MLP package provides excellent thermal impedance while keeping small footprint. VDDQ current limit as well as 3 independent thermal shutdown circuits assure safe operation under all fault conditions.
Typical Application |
Features |
| · Power solution for DDR memory per ACPI motherboard specification· High speed data line termination· Memory cards | · High efficiency (90%) switcher for VDDQ supplies 20 Amps· High current gate drives· Single chip solution complies fully with ACPI power sequencing specifications· Internal S3 state LDO supplies high standby VDDQ current (0.65Amp Min.)· ACPI sleep state controlled· 2 Amp VTT source/sink capability· UVLO on 5V and 12V· Independent thermal shutdown for VDDQ and VTT· Fast transient response· 18 pin MLP package |
| Parameter | Symbol | Maximum | Units |
| Supply Voltage, 5VCC to AGND | V5VCC | 7 | Units |
| Supply Voltage, 12VCC to AGND | V12VCC | 15 | V |
| Standby Input Voltage | V5VSBY | 7 | V |
| Inputs | I/O | 5VSTBY +0.3, AGND -0.3 | V |
| AGND to PGND or LGND | 0.3 | V | |
| VTT Output Current | IO(VTT) | ±2 | A |
| Operating Ambient Temperature Range | TA | 0to 70 | °C |
| Operating Junction Temperature | TJ | 125 | °C |
| Thermal Resistance Junction to Ambient * | JA | 25 | °C/W |
| Thermal Resistance Junction to Case * | JC | 4 | °C/W |
| Storage Temperature | TSTG | -65 to 150 | °C |
| Lead Temperature (Soldering) 10seconds | TLEAD | 300 | °C |
| TG/BG DC Voltage | 12Vcc + 0.3, AGND -0.5 | V | |
| TG/BG AC Voltage | 12Vcc + 1.0, AGND -1.0 | V | |
| ESD Rating (Human Body Model) | ESD | 2 | KV |
